IGBT Transistors for sale & price in Ethiopia

Price : 300.00 ETB

  • Posted: 1 month ago
  • Brand: Other Brand
  • Condition : New

Description

FGH40N60 IGBT
 Product Category: IGBT Transistors
- Configuration: Single
- Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
- Type: NPN
- Collector to Emitter Voltage: 600V
- Gate to Emitter Voltage: 20V
- Transient Gate−to−Emitter Voltage: 30V
- Continuous Collector Current at 25C: 120 A
- Power Dissipation: 160W-290W
- Mounting Style: Through Hole
- Maximum Operating Temperature: 150C
- Minimum Operating Temperature: –55C 
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